NTGS4141NPower MOSFET
30 V, 7.0 A, Single N−Channel, TSOP−6
Features
•Low RDS(on)
•Low Gate Charge
•Pb−Free Package is Available
Applications
http://onsemi.com
V(BR)DSS30 VRDS(on) TYP21.5 mW @ 10 V30 mW @ 4.5 VID MAX7.0 A•Load Switch•Notebook PC•Desktop PC
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain−to−Source VoltageGate−to−Source VoltageContinuous DrainCurrent (Note 1)
SteadyStatet ≤10 s
Power Dissipation(Note 1)
SteadyStatet ≤10 s
Continuous DrainCurrent (Note 2)Power Dissipation(Note 2)
Pulsed Drain Current
SteadyState
TA = 25°CTA = 85°CTA = 25°Ctp = 10 ms
PDIDMTJ,TSTGISEASID
TA = 25°CTA = 85°CTA = 25°CTA = 25°C
PDSymbolVDSSVGSID
Value30±205.03.67.01.02.03.52.50.521−55 to1502.054
WA°CAmJAWUnitVVA
N−ChannelDrain1256Gate3Source41TSOP−6CASE 318GSTYLE 1MARKINGDIAGRAMS4 MGGOperating Junction and Storage TemperatureSource Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy(VDD = 30 V, IL = 10.4 A, VGS = 10 V, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes(1/8″ from case for 10 s)
S4= Device CodeM= Date CodeG= Pb−Free Package(Note: Microdot may be in either location)PIN ASSIGNMENTDrainDrainSource654TL
260°C
THERMAL RESISTANCE RATINGS
Rating
Junction−to−Ambient – Steady State (Note 1)Junction−to−Ambient – t ≤10 s (Note 1)Junction−to−Ambient – Steady State (Note 2)
SymbolRθJARθJARθJA
Max12562.5248
Unit°C/W
123DrainDrainGateORDERING INFORMATION
DeviceNTGS4141NT1NTGS4141NT1G
PackageTSOP−6TSOP−6(Pb−Free)
Shipping†3000/Tape & Reel3000/Tape & Reel
1.Surface−mounted on FR4 board using 1 inch sq pad size(Cu area = 1.127 in sq [1 oz] including traces).
2.Surface−mounted on FR4 board using the minimum recommended pad size(Cu area = 0.0773 in sq).
†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 1
Publication Order Number:
NTGS4141N/D
元器件交易网www.cecb2b.com
NTGS4141N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown VoltageDrain−to−Source Breakdown Voltage Temperature CoefficientZero Gate Voltage Drain Current
V(BR)DSSV(BR)DSS/TJ
IDSS
VGS = 0 V, VDS = 24 V
TJ = 25°CTJ = 125°C
VGS = 0 V, ID = 250 mA
30
18.4
1.010±100
nAVmV/°CmA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage CurrentON CHARACTERISTICS (Note 3)Gate Threshold Voltage
Negative Threshold Temperature CoefficientDrain−to−Source On Resistance
IGSSVDS = 0 V, VGS = ±20 V
VGS(TH)VGS(TH)/TJRDS(on)
VGS = VDS, ID = 250 mA
1.0
5.7
3.0VmV/°C
VGS = 10 V, ID = 7.0 AVGS = 4.5 V, ID = 6.0 A
21.53030
2535
mW
Forward Transconductance
gFSVDS = 10 V, ID = 7.0 A
S
CHARGES, CAPACITANCES AND GATE RESISTANCEInput CapacitanceOutput Capacitance
Reverse Transfer CapacitanceTotal Gate ChargeThreshold Gate ChargeGate−to−Source ChargeGate−to−Drain ChargeTotal Gate ChargeThreshold Gate ChargeGate−to−Source ChargeGate−to−Drain ChargeGate Resistance
SWITCHING CHARACTERISTICS (Note 4)Turn−On Delay TimeRise Time
Turn−Off Delay TimeFall Time
DRAIN − SOURCE DIODE CHARACTERISTICSForward Diode Voltage
VSD
VGS = 0 V, IS = 2.0 A
TJ = 25°CTJ = 125°C
0.780.6315
VGS = 0 V
dIS/dt = 100 A/ms, IS = 2.0 A
9.06.08.0
nCns
1.0
V
td(ON)trtd(OFF)tf
VGS = 10 V, VDS = 24 V, ID = 7.0 A, RG = 3.0 W
6.015184.0
ns
CISSCOSSCRSSQG(TOT)QG(TH)QGSQGDQG(TOT)QG(TH)QGSQGDRG
VGS = 4.5 V, VDS = 15 V,
ID = 7.0 AVGS = 10 V, VDS = 15 V,
ID = 7.0 AVGS = 0 V, f = 1.0 MHz,
VDS = 24 V
56011575120.851.93.06.00.81.853.02.8
WnCnCpF
Reverse Recovery TimeCharge TimeDischarge Time
Reverse Recovery Charge
tRRtatbQRR
3.Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4.Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
元器件交易网www.cecb2b.com
NTGS4141N
TYPICAL PERFORMANCE CURVES
15ID, DRAIN CURRENT (AMPS)10 V6 V4.5 V10
TJ = 25°CID, DRAIN CURRENT (AMPS)3.5 V15VDS ≥ 10 V105
3 V525°C0125°C2.6 V00246810VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)1TJ = −55°C234VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)5Figure 1. On−Region CharacteristicsRDS(on), DRAIN−TO−SOURCE RESISTANCE (W)RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)0.05TJ = 25°CID = 7 A0.040.05Figure 2. Transfer CharacteristicsTJ = 25°C0.040.03VGS = 4.5 V0.02VGS = 10 V0.010051015ID, DRAIN CURRENT (AMPS)0.030.020.010246810VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)Figure 3. On−Resistance vs. Gate−to−SourceVoltage2.0RDS(on), DRAIN−TO−SOURCERESISTANCE (NORMALIZED)ID = 7 AVGS = 10 V1.510000Figure 4. On−Resistance vs. Drain Current andGate VoltageVGS = 0 VIDSS, LEAKAGE CURRENT (nA)1000TJ = 150°C1.0100TJ = 125°C0.50−50
10−25
0
25
50
75
100
125
150
0
TJ, JUNCTION TEMPERATURE (°C)
510152520
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
30
Figure 5. On−Resistance Variation with
TemperatureFigure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
元器件交易网www.cecb2b.com
NTGS4141N
TYPICAL PERFORMANCE CURVES
TJ = 25°CVGS, GATE−TO−SOURCE VOLTAGE (V)10QTVGS1200C, CAPACITANCE (pF)1000800600400Crss200010VDS = 0 VCissVGS = 0 V86Ciss420QGSQGDID = 7 AVDD = 15 VTJ = 25°CCossCrss5VGS0VDS5101520250246810QG, TOTAL GATE CHARGE (nC)12GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)Figure 7. Capacitance Variation1000IS, SOURCE CURRENT (AMPS)VDD = 24 VID = 7 AVGS = 10 Vt, TIME (ns)10076543210110RG, GATE RESISTANCE (OHMS)
1000Figure 8. Gate−To−Source andDrain−To−Source Voltage vs. Total ChargeVGS = 0 VTJ = 25°Ctd(off)tftr10td(on)10.10.20.30.40.50.60.70.8VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.9Figure 9. Resistive Switching TimeVariation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCEAVALANCHE ENERGY (mJ)60Figure 10. Diode Forward Voltage vs. Current
ID = 10.4 A4020025
5075100125
TJ, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
元器件交易网www.cecb2b.com
NTGS4141N
PACKAGE DIMENSIONS
TSOP−6CASE 318G−02
ISSUE P
DNOTES:
1.DIMENSIONING AND TOLERANCING PERANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETER.3.MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OFBASE MATERIAL.
4.DIMENSIONS A AND B DO NOT INCLUDEMOLD FLASH, PROTRUSIONS, OR GATEBURRS.
MILLIMETERS
NOMMAX1.001.100.060.100.380.500.180.263.003.101.501.700.951.050.400.602.753.00
10°−
STYLE 1:PIN 1.
2.3.4.5.6.
INCHESNOM0.0390.0020.0140.0070.1180.0590.0370.0160.108−
HE615243EbeqDIMAA1bcDEeLHEqMIN0.900.010.250.102.901.300.850.202.500°
0.05 (0.002)A1ALcMIN0.0350.0010.0100.0040.1140.0510.0340.0080.0990°DRAINDRAINGATESOURCEDRAINDRAIN
MAX0.0430.0040.0200.0100.1220.0670.0410.0240.11810°
SOLDERING FOOTPRINT*
2.40.0941.90.0750.950.0370.950.0370.70.0281.00.039SCALE 10:1
mmǓǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:N. American Technical Support: 800−282−9855 Toll FreeLiterature Distribution Center for ON SemiconductorUSA/CanadaP.O. Box 61312, Phoenix, Arizona 85082−1312 USAPhone: 480−829−7710 or 800−344−3860 Toll Free USA/CanadaJapan: ON Semiconductor, Japan Customer Focus Center2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051Fax: 480−829−7709 or 800−344−3867 Toll Free USA/CanadaPhone: 81−3−5773−3850Email: orderlit@onsemi.comON Semiconductor Website: http://onsemi.comOrder Literature: http://www.onsemi.com/litorderFor additional information, please contact yourlocal Sales Representative.http://onsemi.com5NTGS4141N/D
因篇幅问题不能全部显示，请点此查看更多更全内容