专利名称：ISFET sensor and method of manufacture发明人：Ronald D. Baxter申请号：US06/631507申请日：19840716公开号：US04505799A公开日：19850319
摘要：There is provided an ISFET structure and a method for manufacturing thatstructure such that external electrical contact to the P+ source and drain regions is madethrough individual holes etched from the back to the source and drain regions withsidewall isolation being provided in the holes and metallization covering the surface ofsaid sidewalls and extending to contact pads on the back of the ISFET.
申请人：GENERAL SIGNAL CORPORATION
代理人：W. G. Miller, Jr.,Harold Huberfeld
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